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| LA733P, LA733Q Amplifier Transistors PNP Silicon http://onsemi.com MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD 625 5.0 PD 1.5 12 TJ, Tstg -55 to +150 Watts mW/C C 1 2 3 TO-92 CASE 29 STYLE 14 mW mW/C Value -48 -60 -5.0 -100 Unit Vdc Vdc Vdc mAdc 1 EMITTER 3 BASE COLLECTOR 2 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RJA RJC Max 200 83.3 Unit C/W C/W MARKING DIAGRAMS LA 733x YWW LA733x x Y WW = Specific Device Code = P or Q = Year = Work Week ORDERING INFORMATION Device LA733P LA733Q Package TO-92 TO-92 Shipping 5000 Units/Box 5000 Units/Box (c) Semiconductor Components Industries, LLC, 2001 1 August, 2001 - Rev. 1 Publication Order Number: LA733P/D LA733P, LA733Q ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Collector-Emitter Breakdown Voltage (IC = -1.0 mAdc, IB = 0) Collector-Base Breakdown Voltage (IC = -10 mAdc, IE = 0) Emitter-Base Breakdown Voltage (IE = -10 mAdc, IC = 0) Collector-Base Leakage Current (VCB = -60 V) Emitter-Base Leakage Current (VEB = -5.0 V, IC = 0) Collector-Emitter Leakage Current (VCE = -50 V) Symbol V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO ICEO Min -48 -60 -5.0 - - - Typ - - - - - - Max - - - -100 -100 -1.0 Unit Vdc Vdc Vdc nAdc nAdc mA ON CHARACTERISTICS DC Current Gain (IC = -1.0 mAdc, VCE = -6.0 Vdc) Collector-Emitter Saturation Voltage (IC = -10 mAdc, IB = -1.0 mAdc) Base-Emitter Saturation Voltage (IC = -10 mAdc, IB = -1.0 mAdc) Base-Emitter On Voltage (IC = -1.0 mAdc, VCE = -6.0 Vdc) hFE LA733P LA733Q VCE(sat) VBE(sat) VBE(on) 200 135 - - -0.55 - - - - - 400 270 -0.3 -0.9 -0.68 Vdc Vdc Vdc - DYNAMIC CHARACTERISTICS Current-Gain - Bandwidth Product (IC = -10 mAdc, VCE = -6.0 Vdc, f = 20 MHz) Common-Base Output Capacitance (VCB = -60 Vdc, IC = 0, f = 1.0 MHz) Noise Figure (IC = -0.3 mAdc, VCE = -6.0 Vdc, RG = 10 kW, f = 100 mHz) fT Cob NF 100 - - - - - 450 7.0 18 MHz pF dB http://onsemi.com 2 LA733P, LA733Q 2.0 hFE, NORMALIZED DC CURRENT GAIN 1.5 1.0 0.7 0.5 VCE = -10 V TA = 25C V, VOLTAGE (VOLTS) -1.0 -0.9 -0.8 -0.7 -0.6 -0.5 -0.4 -0.3 -0.2 -0.1 0.2 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 IC, COLLECTOR CURRENT (mAdc) 0 -0.1 -0.2 VCE(sat) @ IC/IB = 10 -0.5 -1.0 -2.0 -5.0 -10 -20 IC, COLLECTOR CURRENT (mAdc) -50 -100 TA = 25C VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = -10 V 0.3 Figure 1. Normalized DC Current Gain BANDWIDTH PRODUCT (MHz) Figure 2. "Saturation" and "On" Voltages 400 300 C, CAPACITANCE (pF) 200 150 100 80 60 40 30 20 -0.5 -1.0 -2.0 -3.0 -5.0 -10 -20 -30 IC, COLLECTOR CURRENT (mAdc) -50 VCE = -10 V TA = 25C 10 7.0 5.0 Cib TA = 25C 3.0 2.0 Cob f T, CURRENT-GAIN 1.0 -0.4 -0.6 -1.0 -2.0 -4.0 -6.0 -10 VR, REVERSE VOLTAGE (VOLTS) -20 -30 -40 Figure 3. Current-Gain -- Bandwidth Product Figure 4. Capacitances 0.5 0.3 VCE = -10 V f = 1.0 kHz TA = 25C r b, BASE SPREADING RESISTANCE (OHMS) 1.0 hob, OUTPUT ADMITTANCE (OHMS) 150 140 130 120 110 100 -0.1 VCE = -10 V f = 1.0 kHz TA = 25C 0.1 0.05 0.03 0.01 -0.1 -0.2 -0.5 -1.0 -2.0 IC, COLLECTOR CURRENT (mAdc) -5.0 -10 -0.2 -0.3 -0.5 -1.0 -2.0 -3.0 IC, COLLECTOR CURRENT (mAdc) -5.0 -10 Figure 5. Output Admittance Figure 6. Base Spreading Resistance http://onsemi.com 3 LA733P, LA733Q PACKAGE DIMENSIONS TO-92 (TO-226) CASE 29-11 ISSUE AL A R P L SEATING PLANE B NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --0.250 --0.080 0.105 --0.100 0.115 --0.135 --MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --6.35 --2.04 2.66 --2.54 2.93 --3.43 --- K XX G H V 1 D J C SECTION X-X N N DIM A B C D G H J K L N P R V STYLE 14: PIN 1. EMITTER 2. COLLECTOR 3. BASE ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: ONlit@hibbertco.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada JAPAN: ON Semiconductor, Japan Customer Focus Center 4-32-1 Nishi-Gotanda, Shinagawa-ku, Tokyo, Japan 141-0031 Phone: 81-3-5740-2700 Email: r14525@onsemi.com ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative. http://onsemi.com 4 LA733P/D |
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